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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The IRLML6402PBF from International Rectifier is -20V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications such as battery and load management, portable electronics and PCMCIA cards and printed circuit board where space is at a premium.
Drain to source voltage (Vds) of -20V
Gate to source voltage of ±12V
On resistance Rds(on) of 80mohm at Vgs -2.5V
Power dissipation Pd of 1.3W at 25°C
Continuous drain current Id of -3.7A at Vgs -4.5V and 25°C
Operating junction temperature range from -55°C to 150°C

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IRLML6402PBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.065 Ω
Polarity	P-CH
Power Dissipation	1.3 W
Drain to Source Voltage (Vds)	20 V
Continuous Drain Current (Ids)	3.7A
Rise Time	48 ns
Input Capacitance (Ciss)	633pF @10V(Vds)
Fall Time	381 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1300 mW
	Show
Material	Silicon
Product Lifecycle Status	Active
RoHS	RoHS Compliant
REACH SVHC Compliance Edition	2015/12/17

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