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Updated at 17/06/2025 10:30:15(UTC+8)

Certifications

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Description

The IRLZ24NPBF is a 55V single N-channel HEXFET Power MOSFET utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
Logic-level gate drive
Advanced process technology
Dynamic dv/dt rating
Fast switching
Fully avalanche rated
Planar MOSFET technology
Industry-leading quality
±16V Gate to source voltage
0.30W/°C Linear derating factor
11A Avalanche current (IAR)
3.3°C/W Thermal resistance, junction to case
62°C/W Thermal resistance, junction to ambient

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IRLZ24NPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	45 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.06 Ω
Polarity	N-CH
Power Dissipation	45 W
Threshold Voltage	2 V
Input Capacitance	480 pF
Drain to Source Voltage (Vds)	55 V
Breakdown Voltage (Drain to Source)	55 V
Continuous Drain Current (Ids)	18A
Rise Time	74 ns
Input Capacitance (Ciss)	480pF @25V(Vds)
Input Power (Max)	45 W
Fall Time	29 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	45W (Tc)
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Size-Length	10.54 mm
Size-Height	8.77 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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