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Updated at 17/07/2025 10:30:15(UTC+8)

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Description

Don"t be afraid to step up the amps in your device when using this IXDN75N120 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 660000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.

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IXDN75N120 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Chassis
Number of Pins	4 Pin
Case/Package	SOT-227-4
Power Dissipation	660000 mW
Breakdown Voltage (Collector to Emitter)	1200 V
Input Capacitance (Cies)	5.5nF @25V
Input Power (Max)	660 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	660000 mW
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Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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SN:H2.14407LO46120V28Q0QC0S1

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