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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The IXFN140N20P is a PolarHT™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and high power density.
International standard packages
Unclamped inductive switching (UIS) rating
Low package inductance - Easy to drive and to protect
Easy to mount
Space saving

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IXFN140N20P Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Number of Pins	4 Pin
Case/Package	SOT-227-4
Number of Channels	1 Channel
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	0.018 Ω
Polarity	N-Channel
Power Dissipation	680 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Continuous Drain Current (Ids)	140 A
Rise Time	35 ns
Input Capacitance (Ciss)	7500pF @25V(Vds)
Fall Time	90 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	680000 mW
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Size-Length	38.23 mm
Size-Width	25.42 mm
Size-Height	9.6 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

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