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Updated at 02/11/2025 10:30:15(UTC+8)

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Description

The IXFN200N07 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, synchronous rectification, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
International standard packages
MiniBLOC with aluminium nitride isolation
Rugged polysilicon gate cell structure
Unclamped inductive switching (UIS) rating
Low package inductance
Easy to mount
Space saving

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IXFN200N07 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-227-4
Voltage Rating (DC)	70.0 V
Current Rating	200 A
Power Rating	520 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.006 Ω
Polarity	N-Channel
Power Dissipation	520 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	70 V
Breakdown Voltage (Drain to Source)	70 V
Continuous Drain Current (Ids)	200 A
Rise Time	60 ns
Isolation Voltage	2.50 kV
Input Capacitance (Ciss)	9000pF @25V(Vds)
Input Power (Max)	520 W
Fall Time	60 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	520W (Tc)
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Size-Length	38.23 mm
Size-Width	25.42 mm
Size-Height	9.6 mm
Material	Silicon
Weight	44.0 g
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

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