IXYS SEMICONDUCTOR IXGR32N170H1 IGBT Single Transistor, Isolated, 26A, 3.5V, 200W, 1.7kV, TO-247AD, 3Pins
| Attribute | Attribute Value |
|---|---|
| Datasheet | Datasheet |
| 3D Model | 3D Model |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247 |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Rise Time | 250 ns |
| Breakdown Voltage (Collector to Emitter) | 1700 V |
| Reverse recovery time | 230 ns |
| Input Power (Max) | 200 W |
| Fall Time | 250 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200000 mW |
| Show | |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/06/15 |
| ECCN Code | EAR99 |