IXYS SEMICONDUCTOR IXGR60N60C2D1 IGBT Single Transistor, Isolated, 75A, 2.7V, 250W, 600V, TO-247AD, 3Pins
| Attribute | Attribute Value |
|---|---|
| Datasheet | Datasheet |
| 3D Model | 3D Model |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247 |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 250 W |
| Rise Time | 35.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 35 ns |
| Input Power (Max) | 250 W |
| Operating Temperature (Max) | 150 ℃ |
| Show | |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/06/15 |