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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

This PNP JANS2N3637 general purpose bipolar junction transistor from Microsemi is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 175 V and a maximum emitter base voltage of 5 V.

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JANS2N3637 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-39
Power Dissipation	1 W
Breakdown Voltage (Collector to Emitter)	175 V
hFE Min	100 @50mA, 10V
Input Power (Max)	1 W
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1000 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status
ECCN Code	EAR99

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SN:H1.37191LO17121V50Q0QC0S1

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