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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

MJ11015 (PNP)
MJ11012, MJ11016 (NPN)
30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60 −120 VOLTS, 200 WATTS
. . . for use as output devices in complementary general purpose amplifier applications.
•High DC Current Gain hFE= 1000 (Min) @ IC −20 Adc
•Monolithic Construction with Built−in Base Emitter Shunt Resistor
•Junction Temperature to +200C

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MJ11012 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-204-2
Polarity	NPN
Power Dissipation	200 W
Breakdown Voltage (Collector to Emitter)	60 V
Continuous Collector Current	30A
hFE Min	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Gain Bandwidth	4MHz (Min)
Power Dissipation (Max)	200000 mW
	Show
Size-Length	39.37 mm
Size-Width	26.67 mm
Size-Height	8.51 mm
Product Lifecycle Status	Unknown
Packaging	Tray
Minimum Packing Quantity	100
RoHS	RoHS Compliant

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(Additional charges ($35-$50) may apply for delivery in these areas)
- Delivery date: usually 2 to 7 working days.
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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
The terms here are for reference only, the actual terms are subject to the sales quotation.
- Please confirm product specifications when ordering.
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