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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The MJH6284G is a 100V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for use as general purpose amplifiers, low frequency switching and motor control applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
Rugged RBSOA characteristics
Collector-base voltage (Vcbo = 100V)
Emitter-base voltage (Vcbo = 5V)

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MJH6284G Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	100 V
Current Rating	20.0 A
Output Voltage	100 V
Output Current	20 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	160 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	20A
hFE Min	750 @10A, 3V
hFE Max	18000
Input Power (Max)	160 W
DC Current Gain (hFE)	18000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Gain Bandwidth	4MHz (Min)
Power Dissipation (Max)	160 W
Input Voltage	5 V
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Size-Length	16.26 mm
Size-Width	4.9 mm
Size-Height	21.08 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

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