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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The MMBF170 is a N-channel enhancement-mode FET produced using Fairchild"s proprietary high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 500mA DC. It is particularly suited for low voltage, low current applications such as power MOSFET gate drivers and other switching applications.

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MMBF170 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	5 Ω
Power Dissipation	300 mW
Threshold Voltage	2.1 V
Drain to Source Voltage (Vds)	60 V
Input Capacitance (Ciss)	24pF @10V(Vds)
Input Power (Max)	300 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 mW
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Size-Length	2.92 mm
Size-Width	1.3 mm
Size-Height	0.93 mm
Product Lifecycle Status	Unknown
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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