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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The PBHV8215Z is a 2A NPN breakthrough-in small signal (BISS) Transistor in a medium power surface-mount plastic package with increased heat-sink.
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
PNP complement is PBHV9215Z
V8215Z Marking code

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PBHV8215Z Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-223
Number of Positions	4 Position
Polarity	NPN
Power Dissipation	730 mW
Breakdown Voltage (Collector to Emitter)	150 V
Continuous Collector Current	2A
hFE Min	100
DC Current Gain (hFE)	240
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.45 W
	Show
Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.8 mm
Product Lifecycle Status	Unknown
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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