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Updated at 02/11/2025 10:30:15(UTC+8)

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Description

The PBSS5540X is a 5A PNP breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package. It offers collector pad for good heat transfer.
Low collector-emitter saturation voltage VCEsat
High collector current capabilities are IC and ICM
High efficiency leading to less heat generation
1G Marking code

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PBSS5540X Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-89
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	550 mW
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	4A
hFE Min	50
DC Current Gain (hFE)	250
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2.5 W
	Show
Size-Length	4.6 mm
Size-Width	2.6 mm
Size-Height	1.6 mm
Product Lifecycle Status	Unknown
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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SN:H1.64947LO95977V48Q0QC0S1

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