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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

Design various electronic circuits with this versatile NPN STD840DN40 GP BJT from STMicroelectronics. This bipolar junction transistor"s maximum emitter base voltage is 9 V. Its maximum power dissipation is 3000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V.

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STD840DN40 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	8 Pin
Case/Package	DIP-8
Polarity	NPN
Power Dissipation	45 W
Breakdown Voltage (Collector to Emitter)	400 V
Continuous Collector Current	4A
hFE Min	8 @2A, 5V
Input Power (Max)	3 W
DC Current Gain (hFE)	8
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	3000 mW
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Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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SN:H0.52918LO99398V35Q0QC0S1

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