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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The STN1HNK60 is a 600V N-channel SuperMESH™ MOSFET with extreme optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
Extremely high dv/dt capability
ESD improved capability
100% Avalanche tested
New high voltage benchmark
Gate charge minimized
ESD sensitive device, take proper precaution while handling the device.

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STN1HNK60 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-261-4
Voltage Rating (DC)	600 V
Current Rating	400 mA
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	8 Ω
Polarity	N-Channel
Power Dissipation	3.3 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Continuous Drain Current (Ids)	500 mA
Rise Time	5 ns
Input Capacitance (Ciss)	156pF @25V(Vds)
Input Power (Max)	3.3 W
Fall Time	25 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.3W (Tc)
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Size-Length	6.5 mm
Size-Width	3.5 mm
Size-Height	1.8 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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