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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

Amplify your current using STMicroelectronics" NPN STP03D200 Darlington transistor in order to yield a higher current gain. This Darlington transistor array"s maximum emitter base voltage is 20 V, while its maximum base emitter saturation voltage is 2@0.5mA@50mA V. This product"s maximum continuous DC collector current is 0.1 A, while its minimum DC current gain is 230@20mA@10 V|200@30mA@10V. It has a maximum collector emitter saturation voltage of 2@0.5mA@50mA V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 1200 V and a maximum emitter base voltage of 20 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.

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STP03D200 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	40 W
Breakdown Voltage (Collector to Emitter)	1200 V
Continuous Collector Current	0.1A
hFE Min	200 @30mA, 10V
Input Power (Max)	40 W
DC Current Gain (hFE)	200
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	40 W
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.75 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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