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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization
Applications
■ Switching application

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STP40NF12 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	120 V
Current Rating	40.0 A
Drain to Source Resistance (on) (Rds)	0.032 Ω
Polarity	N-Channel
Power Dissipation	150 W
Threshold Voltage	2.8 V
Drain to Source Voltage (Vds)	120 V
Breakdown Voltage (Drain to Source)	120 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	160 A
Rise Time	63 ns
Input Capacitance (Ciss)	1880pF @25V(Vds)
Fall Time	28 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	150W (Tc)
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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- Decapsulation control
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- Electrical testing
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SN:H1.99093LO39438V44Q0QC0S1

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