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STP4N150 - ST Microelectronics
Manufacturer:
ST Microelectronics
ManyChip's Part#:
MC4382080
Category:
MOSFET, MOSFET Transistor
Package:
TO-220-3
Datasheet:
Datasheet 3D Model
Description:
N-channel 1500V - 5Ω - 4A - PowerMESH™ Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3pF
Stock Locations:
Availability:
1,992 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 7.02

Updated at 17/06/2025 10:30:15(UTC+8)

Certifications

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Description

The STP4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate charge and switching characteristics. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
100% Avalanche tested
Intrinsic capacitances and Qg minimized
High speed switching

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STP4N150 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	1.50 kV
Current Rating	4.00 A
Power Rating	160 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	5 Ω
Polarity	N-Channel
Power Dissipation	160 W
Threshold Voltage	4 V
Input Capacitance	1.30 nF
Gate Charge	50.0 nC
Drain to Source Voltage (Vds)	1.5 kV
Breakdown Voltage (Drain to Source)	1500 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	4.00 A
Rise Time	30 ns
Input Capacitance (Ciss)	1300pF @25V(Vds)
Input Power (Max)	160 W
Fall Time	45 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	160W (Tc)
	Show
Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.75 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99
HK STC License	NLR

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