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Updated at 18/06/2025 10:30:15(UTC+8)

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Description

The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter.
**Key Features**
No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
AEC-Q101 qualified
PPAP capable
Operating Tj from -40 °C to 175 °C
ECOPACK® 2 compliant component

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STPSC12065DY Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-220-2
Forward Voltage	1.45V @12A
Forward Current	12 A
Max Forward Surge Current (Ifsm)	220 A
Maximum Forward Voltage (Max)	1.65 V
Forward Current (Max)	12 A
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Junction Temperature (Max)	175 ℃
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.75 mm
Product Lifecycle Status	Active
Packaging	Each
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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