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STPSC2006CW - ST Microelectronics
Manufacturer:
ST Microelectronics
ManyChip's Part#:
MC12599853
Category:
Diode Array, TVS Diode Array
Package:
TO-247-3
Datasheet:
Datasheet 3D Model
Description:
STMICROELECTRONICS STPSC2006CW Silicon Carbide Schottky Diode, SIC, 600V Series, Dual Common Cathode, 600V, 20A, 12NC, TO-247
Stock Locations:
Availability:
1,162 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 9.23

Updated at 31/10/2025 10:30:15(UTC+8)

Certifications

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Description

The STPSC2006CW is a Power Schottky Silicon Carbide Diode features ultra high performance. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. ST SiC diode will boost the performance of PFC operations in hard switching conditions.
No or negligible reverse recovery
Switching behaviour independent of temperature
Particularly suitable in PFC boost diode function

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STPSC2006CW Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Forward Voltage	1.7 V
Thermal Resistance	1.2 ℃/W
Reverse recovery time	0 ns
Forward Current	20 A
Max Forward Surge Current (Ifsm)	40 A
Maximum Forward Voltage (Max)	1.7 V
Forward Current (Max)	20000 mA
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Junction Temperature (Max)	175 ℃
	Show
Operating Temperature	-40℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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