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STPSC606D - ST Microelectronics
Manufacturer:
ST Microelectronics
ManyChip's Part#:
MC6290603
Category:
TVS Diode
Package:
TO-220-2
Datasheet:
Datasheet 3D Model
Description:
STMICROELECTRONICS STPSC606D Silicon Carbide Schottky Diode, SIC, 600V Series, Single, 600V, 6A, 6NC, TO-220AC
Stock Locations:
Availability:
296 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 4.88

Updated at 01/11/2025 10:30:15(UTC+8)

Certifications

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Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
ST SiC diodes will boost the performance of PFC operations in hard switching conditions.
**Key Features**
No or negligible reverse recovery
Dedicated to PFC boost diode
Switching behavior independent of temperature

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STPSC606D Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-220-2
Forward Voltage	1.7 V
Thermal Resistance	2.8 ℃/W
Reverse recovery time	0 ns
Forward Current	6 A
Max Forward Surge Current (Ifsm)	27 A
Maximum Forward Voltage (Max)	1.7 V
Forward Current (Max)	6000 mA
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Junction Temperature (Max)	175 ℃
	Show
Operating Temperature	-40℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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