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Updated at 16/05/2025 10:30:15(UTC+8)

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Description

The STW11NM80 is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET developed using STMicroelectronics" revolutionary MDmesh™ technology, which associates the multiple drain process with the company"s PowerMESH™ horizontal layout. This device offers extremely low ON-resistance, high dV/dt and excellent avalanche characteristics. Utilizing ST"s proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar products on the market.
Low gate input resistance
Best RDS (ON) Qg in the industry

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STW11NM80 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	800 V
Current Rating	11.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.35 Ω
Polarity	N-Channel
Power Dissipation	150 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	800 V
Breakdown Voltage (Drain to Source)	800 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	5.50 A
Rise Time	17 ns
Input Capacitance (Ciss)	1630pF @25V(Vds)
Input Power (Max)	150 W
Fall Time	15 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	150W (Tc)
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

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