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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

Implement this versatile PNP ZTX549 GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.

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ZTX549 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-92-3
Frequency	100 MHz
Voltage Rating (DC)	-25.0 V
Current Rating	-1.00 A
Polarity	PNP
Power Dissipation	1 W
Gain Bandwidth Product	100 MHz
Breakdown Voltage (Collector to Emitter)	30 V
Continuous Collector Current	1A
hFE Min	100 @500mA, 2V
Input Power (Max)	1 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	1000 mW
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Size-Length	4.95 mm
Size-Width	2.41 mm
Size-Height	4.95 mm
Material	Silicon
Operating Temperature	-55℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

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