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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The ZVN3310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 10R resistance and 625mW power dissipation.

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ZVN3310A Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-92-3
Voltage Rating (DC)	100 V
Current Rating	200 mA
Power Rating	0.625 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	10 Ω
Polarity	N-Channel
Power Dissipation	625 mW
Threshold Voltage	2.4 V
Input Capacitance	40.0 pF
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	200 mA
Rise Time	7.00 ns
Input Capacitance (Ciss)	40pF @25V(Vds)
Input Power (Max)	625 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
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Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/12/17

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