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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

This 2N3960 epitaxial planar transistor is military qualified up to the JANTXV level for high-reliability applications. It features a thru-hole TO-18 package. This device is also available in a low profile ceramic UB package.

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2N3960 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-206
Breakdown Voltage (Collector to Emitter)	12 V
hFE Min	60 @10mA, 1V
Input Power (Max)	400 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	400 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Obsolete
Packaging	Bulk
RoHS	Non-Compliant

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SN:H0.57299LO40333V39Q0QC0S1

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