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Updated at 17/06/2025 10:30:15(UTC+8)

Certifications

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Description

The 2SC5200OTU is a 250V NPN Epitaxial Silicon Transistor features high current capability and high power dissipation. Suitable for high fidelity audio output amplifier and general purpose power amplifier applications. This product is general usage and suitable for many different applications.
Excellent gain linearity for low THD
Complement to the 2SA1943/FJL4215
Wide SOA for reliable operation
High power dissipation (150W)
High frequency (30MHz)
High voltage (VCEO = 250V)

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2SC5200OTU Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Frequency	30 MHz
Number of Positions	3 Position
Power Dissipation	150 W
Breakdown Voltage (Collector to Emitter)	250 V
hFE Min	80 @1A, 5V
Input Power (Max)	150 W
DC Current Gain (hFE)	80
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-50 ℃
Power Dissipation (Max)	150000 mW
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Size-Length	20 mm
Size-Width	5 mm
Size-Height	26 mm
Material	Silicon
Operating Temperature	-50℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status
ECCN Code	EAR99

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