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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

Add switching and amplifying capabilities to your electronic circuit with this NPN 2SC6144SG GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 25000 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V.

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2SC6144SG Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220F-3
Frequency	330 MHz
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	25 W
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	10A
hFE Min	200
hFE Max	560
Input Power (Max)	25 W
DC Current Gain (hFE)	200
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	25000 mW
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Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
Minimum Packing Quantity	50
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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