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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.
Features
•High Current: IC= −1.0 A
•The SOT−223 Package can be soldered using wave or reflow.
•SOT−223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.
•NPN Complement is BCP68

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BCP69T1 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Case/Package	TO-261-4
Voltage Rating (DC)	-20.0 V
Current Rating	-1.00 A
Polarity	PNP
Power Dissipation	1.5 W
Gain Bandwidth Product	60 MHz
Breakdown Voltage (Collector to Emitter)	20 V
Continuous Collector Current	1A
hFE Min	85 @500mA, 1V
Input Power (Max)	1.5 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	65 ℃
	Show
Size-Length	6.5 mm
Size-Width	3.5 mm
Size-Height	1.57 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tape & Reel (TR)
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

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