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Updated at 02/11/2025 10:30:15(UTC+8)

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Description

Implement this versatile PNP BD136G GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1250 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.

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BD136G Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Voltage Rating (DC)	-45.0 V
Current Rating	-1.50 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	1.25 W
Breakdown Voltage (Collector to Emitter)	45 V
Thermal Resistance	10℃/W (RθJC)
Continuous Collector Current	1.5A
hFE Min	40 @150mA, 2V
Input Power (Max)	1.25 W
DC Current Gain (hFE)	25
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1250 mW
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Size-Length	7.8 mm
Size-Width	2.66 mm
Size-Height	11.04 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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