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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The FDP55N06 is an UniFET™ N-channel High Voltage MOSFET produced based on Fairchild Semiconductor"s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
100% Avalanche tested
30nC Typical low gate charge
60pF Typical low Crss

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FDP55N06 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.018 Ω
Power Dissipation	114 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	60 V
Rise Time	130 ns
Input Capacitance (Ciss)	1510pF @25V(Vds)
Input Power (Max)	114 W
Fall Time	95 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	114000 mW
	Show
Product Lifecycle Status	Active
Packaging	Rail, Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

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