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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
■ 10 A, 30 V. RDS(ON) = 13.5 mΩ @ VGS = 10 V
RDS(ON) = 20 mΩ @ VGS = 4.5 V
■ Fast switching speed
■ Low gate charge
■ High performance trench technology for extremely low RDS(ON)
■ High power and current handling capability

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FDS4410A Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Voltage Rating (DC)	30.0 V
Current Rating	10.0 A
Polarity	N-Channel
Power Dissipation	2.5 W
Input Capacitance	1.21 nF
Gate Charge	12.0 nC
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30.0 V
Continuous Drain Current (Ids)	10.0 A
Rise Time	5 ns
Input Capacitance (Ciss)	1205pF @15V(Vds)
Input Power (Max)	1 W
Fall Time	9 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2500 mW
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Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Unknown
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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