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FQB19N20LTM - Fairchild
Manufacturer:
Fairchild
ManyChip's Part#:
MC14433136
Category:
MOSFET, MOSFET Transistor
Package:
TO-263-3
Datasheet:
Datasheet 3D Model
Description:
FAIRCHILD SEMICONDUCTOR FQB19N20LTM MOSFET Transistor, N Channel, 21A, 200V, 0.11Ω, 10V, 2V
Stock Locations:
Availability:
224 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 0.76

Updated at 30/10/2025 10:30:15(UTC+8)

Certifications

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Description

The FQB19N20LTM is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
100% Avalanche tested
31nC Typical low gate charge
30pF Typical low Crss

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FQB19N20LTM Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	2 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	200 V
Current Rating	21.0 A
Number of Positions	2 Position
Drain to Source Resistance (on) (Rds)	0.11 Ω
Polarity	N-Channel
Power Dissipation	3.13 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	21.0 mA
Rise Time	300 ns
Input Capacitance (Ciss)	2200pF @25V(Vds)
Input Power (Max)	3.13 W
Fall Time	180 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.13W (Ta), 140W (Tc)
	Show
Size-Length	10.67 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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