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Updated at 17/06/2025 10:30:15(UTC+8)

Certifications

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Description

The FQD20N06TM is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
100% Avalanche tested
11.5nC Typical low gate charge
25pF Typical low Crss

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FQD20N06TM Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.05 Ω
Power Dissipation	2.5 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	60 V
Rise Time	45 ns
Input Capacitance (Ciss)	450pF @25V(Vds)
Input Power (Max)	2.5 W
Fall Time	25 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5 W
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Size-Length	6.6 mm
Size-Width	6.1 mm
Size-Height	2.3 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
The terms here are for reference only, the actual terms are subject to the sales quotation.
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SN:H2.17482LO46332V42Q0QC0S0

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