Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3Pin

| Attribute | Attribute Value |
|---|---|
| Datasheet | Datasheet |
| 3D Model | 3D Model |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Voltage Rating (DC) | 600 V |
| Current Rating | 9.50 A |
| Drain to Source Resistance (on) (Rds) | 730 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 50 W |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 9.50 A |
| Input Capacitance (Ciss) | 2040pF @25V(Vds) |
| Input Power (Max) | 50 W |
| Power Dissipation (Max) | 50W (Tc) |
| Show | |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| ECCN Code | EAR99 |