FS200R07A1E3 Infineon - IGBT Transistor, IGBT Module

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Updated at 12/09/2026 10:30:15(UTC+8)

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Description

Сводка характеристик:
Полный 3-фазный шестипакетный модуль с NTC в одном компактном корпусе
650-В IGBT3 с траншейным полевым стопом и согласованным эмиттерно-управляемым диодом EC3 на 650 В
Расширенный диапазон температур: Tjop = 150 °C, Tjmax = 175 °C
Масштабируемая номинальная мощность
Номинальный ток до 200 А постоянного тока
Усовершенствованная разварка проводов
Надёжная керамика Al2O3 (TC) для автомобильных применений
Медная базовая пластина
Полностью сертифицирован для автомобильного применения
Преимущества:
Экономически эффективное системное решение
Высокая эффективность благодаря низким потерям мощности
Высокая надёжность
Компактная конструкция
Доступен референсный дизайн HYBRID KIT1+

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Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	25 Pin
Case/Package	AG-HYBRID1-1
Power Rating	790 W
Breakdown Voltage (Collector to Emitter)	650 V
Input Capacitance (Cies)	13nF @25V
Rating Power (Max)	790 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	790 W
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Size-Length	140 mm
Size-Width	72 mm
Size-Height	17 mm
Operating Temperature	-40℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Box
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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SN:H0.85948LO107130V4Q0QC0S1

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