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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The IR2213SPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 1200V.
Floating channel designed for bootstrap operation
Tolerant to negative transient voltage
DV/DT Immune
Under-voltage lockout for both channels
CMOS Schmitt-triggered inputs with pull-down
Cycle-by-cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
3.3V Logic compatible
Logic and power ground ±5V offset

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IR2213SPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	16 Pin
Case/Package	SOIC-16
Supply Voltage (DC)	12.0V (min)
Rise/Fall Time	25ns, 17ns
Number of Outputs	2 Output
Output Voltage	12.20 V
Output Current	1.7 A
Number of Channels	2 Channel
Number of Positions	16 Position
Power Dissipation	1000 mW
Quiescent Current	180 µA
Rise Time	25 ns
Fall Time	17 ns
Fall Time (Max)	17 ns
Fall Time (Max)	25 ns
Operating Temperature (Max)	125 ℃
Power Dissipation (Max)	1000 mW
Supply Voltage	12V ~ 20V
Supply Voltage (Max)	20 V
Supply Voltage (Min)	12 V
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Size-Length	10.5 mm
Size-Width	7.6 mm
Size-Height	2.35 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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