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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

Description
Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax

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IRF1503 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Forward Voltage	1.30 V
Drain to Source Resistance (on) (Rds)	2.60 mΩ
Power Dissipation	330 W
Part Family	IRF1503
Breakdown Voltage (Drain to Source)	30.0 V
Rise Time	130 ns
	Show
Product Lifecycle Status	Active
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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SN:H0.78217LO73361V40Q0QC0S0

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