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Updated at 04/12/2025 10:30:15(UTC+8)

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Description

The IRF350 is a N-channel Transistor features repetitive avalanche and dV/dt rating.
400V BVDSS
14A ID
56A Pulsed drain current
150W Maximum power dissipation
1.2W/°C Linear derating factor
±20V Gate-to-source voltage

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IRF350 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-204
Number of Positions	2 Position
Drain to Source Resistance (on) (Rds)	0.3 Ω
Polarity	N-Channel
Power Dissipation	150 W
Part Family	IRF350
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	400 V
Breakdown Voltage (Drain to Source)	400 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	14.0 A
Operating Temperature (Max)	150 ℃
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Weight	12.0 g
Product Lifecycle Status	Unknown
RoHS	Non-Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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