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Updated at 17/06/2025 10:30:15(UTC+8)

Certifications

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Description

The IRF5802TRPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters, DC switches and load switch.
Fully characterized avalanche voltage and current
Fully characterized capacitance including effective COSS to simplify design
Halogen-free

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IRF5802TRPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	TSOT-23-6
Power Rating	2 W
Number of Channels	1 Channel
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	1.2 Ω
Polarity	N-CH
Power Dissipation	2 W
Threshold Voltage	5.5 V
Input Capacitance	88 pF
Drain to Source Voltage (Vds)	150 V
Breakdown Voltage (Drain to Source)	150 V
Continuous Drain Current (Ids)	0.9A
Rise Time	1.6 ns
Input Capacitance (Ciss)	88pF @25V(Vds)
Input Power (Max)	2 W
Fall Time	9.2 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2W (Ta)
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Size-Length	3 mm
Size-Width	1.5 mm
Size-Height	0.9 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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