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Updated at 17/06/2025 10:30:15(UTC+8)

Certifications

ManyChip is committed to product quality and safety with ISO 9001, ISO 13485, ISO 45001, UL, RoHS, CQC and REACH certifications.

Description

The IRF710PBF is a 400V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
Dynamic dV/dt rating
Repetitive avalanche rated
150°C Operating temperature
Easy to parallel
Simple drive requirement

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IRF710PBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	36 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	3.6 Ω
Polarity	N-Channel
Power Dissipation	36 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	400 V
Continuous Drain Current (Ids)	2.00 A
Rise Time	9.9 ns
Input Capacitance (Ciss)	170pF @25V(Vds)
Input Power (Max)	36 W
Fall Time	11 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	36 W
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Size-Length	10.41 mm
Size-Width	4.7 mm
Size-Height	9.01 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
Minimum Packing Quantity	50
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

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(Additional charges ($35-$50) may apply for delivery in these areas)
- Delivery date: usually 2 to 7 working days.
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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
The terms here are for reference only, the actual terms are subject to the sales quotation.
- Please confirm product specifications when ordering.
- MOQ refers to the minimum order quantity required to purchase each part.
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- Electrical testing
- Surface testing
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