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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The IRF7749L2TRPBF is a DirectFET™ N-channel Power MOSFET ideal for high performance isolated converter and primary switch socket. It combines the latest HEXFET® power MOSFET silicon technology with the advanced DirectFET™ packaging to achieve the lowest ON-state resistance in a package. The DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infrared or convection soldering techniques. It allows dual sided cooling to maximize thermal transfer in power systems. It is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements and makes this device ideal for high performance power converters.
SP001577498
Low conduction losses
High CdV/dt immunity
Dual-sided cooling compatible
Compatible with existing surface-mount techniques

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IRF7749L2TRPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	Direct-FET
Power Rating	125 W
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0011 Ω
Polarity	N-Channel
Power Dissipation	3.3 W
Threshold Voltage	2.9 V
Input Capacitance	12320 pF
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Continuous Drain Current (Ids)	33A
Rise Time	43 ns
Input Capacitance (Ciss)	12320pF @25V(Vds)
Fall Time	39 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	3.3W (Ta), 125W (Tc)
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Size-Length	9.15 mm
Size-Width	7.1 mm
Size-Height	0.74 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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