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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The IRFL4310TRPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1W is possible in a typical surface-mount application.
Dynamic dV/dt rating
Ease of paralleling
Advanced process technology
Low static drain-to-source ON-resistance

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IRFL4310TRPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Power Rating	2.1 W
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	0.2 Ω
Polarity	N-CH
Power Dissipation	2.1 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	2.2A
Rise Time	18 ns
Input Capacitance (Ciss)	330pF @25V(Vds)
Input Power (Max)	1 W
Fall Time	20 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1W (Ta)
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Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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