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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The IRFR5305TRLPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
Advanced process technology
Fully avalanche rating
Low static drain-to-source ON-resistance
Dynamic dV/dt rating

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IRFR5305TRLPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	89 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	65 mΩ
Polarity	P-CH
Power Dissipation	110 W
Input Capacitance	1200 pF
Drain to Source Voltage (Vds)	55 V
Continuous Drain Current (Ids)	31A
Rise Time	66 ns
Reverse recovery time	71 ns
Maximum Forward Voltage (Max)	1.3 V
Input Capacitance (Ciss)	1200pF @25V(Vds)
Input Power (Max)	110 W
Fall Time	63 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Junction Temperature	-55℃ ~ 175℃
Power Dissipation (Max)	110W (Tc)
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Size-Length	6.73 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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