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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Ixys Corporation"s IXFK24N100 power MOSFET can provide a solution. Its maximum power dissipation is 560000 mW. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

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IXFK24N100 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Voltage Rating (DC)	1.00 kV
Current Rating	24.0 A
Power Rating	560 W
Drain to Source Resistance (on) (Rds)	390 mΩ
Polarity	N-CH
Power Dissipation	560 W
Drain to Source Voltage (Vds)	1000 V
Continuous Drain Current (Ids)	24.0 A
Rise Time	35 ns
Input Capacitance (Ciss)	8700pF @25V(Vds)
Input Power (Max)	560 W
Fall Time	21 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	560W (Tc)
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Size-Height	26.16 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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SN:H1.65103LO52467V37Q0QC0S0

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