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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

Make an effective common source amplifier using this IXFN50N80Q2 power MOSFET from Ixys Corporation. Its maximum power dissipation is 1135000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.

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IXFN50N80Q2 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	SOT-227-4
Power Rating	1135 W
Polarity	N-CH
Power Dissipation	1135 W
Drain to Source Voltage (Vds)	800 V
Continuous Drain Current (Ids)	50A
Rise Time	25 ns
Input Capacitance (Ciss)	13500pF @25V(Vds)
Input Power (Max)	890 W
Fall Time	13 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1135W (Tc)
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Size-Length	38.23 mm
Size-Width	25.42 mm
Size-Height	9.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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