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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The IXFN64N50P is a single N-channel Power MOSFET with fast intrinsic diode (HiPerFET™). It features low gate drive requirement and high power density. It is suitable for DC-to-DC converters, laser drivers, switched-mode and resonant-mode power supplies.
International standard packages
MiniBLOC with aluminium nitride isolation
Fast intrinsic diode
Avalanche rating
Low static drain-to-source ON-resistance
2500V Isolation voltage

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IXFN64N50P Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	SOT-227-4
Voltage Rating (DC)	500 V
Current Rating	64.0 A
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	0.085 Ω
Polarity	N-Channel
Power Dissipation	700 W
Threshold Voltage	5.5 V
Input Capacitance	8.70 nF
Gate Charge	150 nC
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Continuous Drain Current (Ids)	61.0 A
Input Capacitance (Ciss)	8700pF @25V(Vds)
Input Power (Max)	700 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	700W (Tc)
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Size-Length	38.23 mm
Size-Width	25.42 mm
Size-Height	9.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

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