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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

IXYS extends its GenX3™ insulated gate bipolar transistor (IGBT) product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3™ IGBT process and utilize IXYS’ advanced Punch-Though (PT) technology, tailored to provide higher surge current capabilities, lower saturation voltages, and lower switching losses.

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IXGN320N60A3 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-227-4
Power Rating	735 W
Power Dissipation	735000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Input Capacitance (Cies)	18nF @25V
Input Power (Max)	735 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	735000 mW
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Size-Length	38.23 mm
Size-Width	25.42 mm
Size-Height	9.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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