JAN Series 60V 600mA PNP Through Hole Switching Silicon Transistor - TO-39

| Attribute | Attribute Value |
|---|---|
| Datasheet | Datasheet |
| 3D Model | 3D Model |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-39-3 |
| Power Dissipation | 0.6 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 100 @150mA, 10V |
| Input Power (Max) | 800 mW |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 600 mW |
| Show | |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Bag |
| RoHS | Non-Compliant |
| Lead-Free Status | Contains Lead |
| ECCN Code | EAR99 |