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Updated at 02/11/2025 10:30:15(UTC+8)

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Description

The NDS8434 is a -20V P-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed. This product is general usage and suitable for many different applications.
High power and current handling capability

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NDS8434 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Number of Pins	8 Pin
Case/Package	SOIC-8
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.026 Ω
Power Dissipation	2.5 W
Threshold Voltage	700 mV
Drain to Source Voltage (Vds)	20 V
Rise Time	38 ns
Input Capacitance (Ciss)	2330pF @10V(Vds)
Input Power (Max)	1 W
Fall Time	63 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2500 mW
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Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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SN:H1.60527LO12878V33Q0QC0S0

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