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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The NDT451AN is a N-channel enhancement-mode Power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance and provide superior switching performance. It is particularly suited for low voltage applications such as DC-to-DC conversion where fast switching, low in-line power loss and resistance to transients are needed.
High density cell design for extremely low RDS (ON)
High power and current handling capability in a widely used surface-mount package

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NDT451AN Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Voltage Rating (DC)	30.0 V
Current Rating	7.10 A
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	0.03 Ω
Polarity	N-Channel
Power Dissipation	3 W
Threshold Voltage	1.6 V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	7.20 A
Rise Time	13 ns
Input Capacitance (Ciss)	720pF @15V(Vds)
Input Power (Max)	1.1 W
Fall Time	10 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	3 W
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.7 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99
HK STC License	NLR

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